A DRDO laboratory called Solid State Physics Laboratory has effectively created domestic methods for cultivating and producing 4-inch-diameter silicon carbide (SiC) wafers, as well as for creating monolithic microwave integrated circuits (MMICs) up to 40W and gallium nitride (GaN) high electron mobility transistors (HEMTs) up to 150W for applications up to X-band frequencies. Next-generation applications in the fields of clean energy, aerospace, and defense are made possible in large part by GaN/SiC technology.
Future combat systems, RADARS, electronic warfare systems, and green energy solutions all depend on this cutting-edge technology because it provides increased performance, decreased size and weight, and higher efficiency. GaN/SiC technology offers a crucial basis for communications, intelligence, reconnaissance, and unmanned systems for both military and commercial sectors, including electric cars and renewable energy, in response to the growing need for lighter and more compact power sources in future combat systems.
GAETEC in Hyderabad has successfully established indigenous GaN on SiC based MMICs with limited production capabilities. These cutting-edge multifunctional MMICs serve a broad range of applications in space, aerospace, 5G/satellite communications, and next-generation strategic systems. An important step in India’s path to “Aatmanirbhar Bharat” is the creation of commercially feasible SiC and GaN-based MMIC technologies, which promotes independence in the semiconductor industry.
